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| SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 BBY40 2 1 PARTMARKING DETAIL BBY40 - S2 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL P tot T j:T stg VALUE 330 -55 to +150 UNIT mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Reverse current SYMBOL V BR MIN. 28.0 TYP. MAX. UNIT V CONDITIONS. I R = 10A V R = 28V V R = 28V, T amb = 60C IR 10 1.0 nA A TUNING CHARACTERISTICS (at Tamb = 25C). PARAMETER Diode Capacitance SYMBOL Cd MIN. 26.0 4.3 5.0 0.4 TYP. MAX. 32.0 6.0 6.5 0.6 UNIT pF pF CONDITIONS. V R = 3V, f=1MHz V R = 25V, f=1MHz V R = 3V/25V, f=1MHz f=200MHz at the value of V R at which C d=25pF Capacitance Ratio Series Resistance Cd / Cd rd Spice parameter data is available upon request for this device BBY40 TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS 100 Typical Diode Capacitance 10 1 0.1 1 10 100 Reverse Voltage |
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